25-nm p-channel vertical MOSFET's with SiGeC source-drains

被引：32

作者：

Yang, M ^{[1
]}

Chang, CL ^{[1
]}

Carroll, M ^{[1
]}

Sturm, JC ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 06期

关键词：

D O I：

10.1109/55.767105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The scaling of vertical p-channel MOSFET's with the source and drain doped with boron during low temperature epitaxy is limited by the diffusion of boron during subsequent side wall gate oxidation. By introducing thin SiGeC layers in the source and drain regions, this diffusion has been suppressed, enabling for the first time the scaling of vertical p-channel MOSFET's to under 100 nm in channel length to be realized. Device operation with a channel length down to 25 nm has been achieved.

引用

页码：301 / 303

页数：3

共 19 条

[1] Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's [J].

Auth, CP ;

Plummer, JD .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (02) :74-76

[2] Vertical, fully-depleted, surrounding gate MOSFETs on sub-0.1 mu m thick silicon pillars [J].

Auth, CP ;

Plummer, JD .

1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST, 1996, :108-109

[3] Selectively grown vertical Si-p MOS transistor with short channel lengths [J].

Behammer, D ;

Vescan, L ;

Loo, R ;

Moers, J ;

Muck, A ;

Luth, H ;

Grabolla, T .

ELECTRONICS LETTERS, 1996, 32 (04) :406-407

[4]

CARROLL M, 1998, P 40 EL MAT C JUN, P14

[5] Quantitative measurement of reduction of boron diffusion by substitutional carbon incorporation [J].

Carroll, MS ;

Lanzerotti, LD ;

Sturm, JC .

DIFFUSION MECHANISMS IN CRYSTALLINE MATERIALS, 1998, 527 :417-422

[6] The effect of carbon on the valence band offset of compressively strained Si1-x-yGexCy/(100) Si heterojunctions [J].

Chang, CL ;

StAmour, A ;

Sturm, JC .

APPLIED PHYSICS LETTERS, 1997, 70 (12) :1557-1559

[7] VERTICAL SI-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH CHANNEL LENGTHS OF 50 NM BY MOLECULAR-BEAM EPITAXY [J].

GOSSNER, H ;

EISELE, I ;

RISCH, L .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B) :2423-2428

[8] SILICON OXIDATION STUDIES - SILICON ORIENTATION EFFECTS ON THERMAL-OXIDATION [J].

IRENE, EA ;

MASSOUD, HZ ;

TIERNEY, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1253-1256

[9] COMPARISON OF BORON-DIFFUSION IN SI AND STRAINED SI1-XGEX EPITAXIAL LAYERS [J].

KUO, P ;

HOYT, JL ;

GIBBONS, JF ;

TURNER, JE ;

JACOWITZ, RD ;

KAMINS, TI .

APPLIED PHYSICS LETTERS, 1993, 62 (06) :612-614

[10] Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation [J].

Lanzerotti, LD ;

Sturm, JC ;

Stach, E ;

Hull, R ;

Buyuklimanli, T ;

Magee, C .

APPLIED PHYSICS LETTERS, 1997, 70 (23) :3125-3127

← 1 2 →