COMPARISON OF BORON-DIFFUSION IN SI AND STRAINED SI1-XGEX EPITAXIAL LAYERS

被引：89

作者：

KUO, P ^{[1
]}

HOYT, JL ^{[1
]}

GIBBONS, JF ^{[1
]}

TURNER, JE ^{[1
]}

JACOWITZ, RD ^{[1
]}

KAMINS, TI ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.108872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated boron diffusion in Si and strained Si1-xGex, in situ doped, epitaxial layers. During inert ambient annealing at 860-degrees-C, boron diffusion is observed to be slower in Si0.83Ge0.17 than in Si for boron concentration levels between 5 X 10(16) and 2.5 X 10(19) cm-3. Computer simulations of the measured boron profiles for annealed samples indicate that the effective boron diffusivity D(eff) in Si0.83Ge0.17 is approximately an order of magnitude lower than that in Si. This disparity is found to increase with increasing boron concentration.

引用

页码：612 / 614

页数：3

共 16 条

[1]

BEAN JC, 1985, 1ST P INT S SIL MOL, P385

[2]

ENQUIST PM, 1985, I PHYS C SER, V74, P599

[3] LIMITED REACTION PROCESSING - SILICON EPITAXY [J].