SMALL-GEOMETRY, HIGH-PERFORMANCE, SI-SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：39

作者：

KAMINS, TI ^{[1
]}

NAUKA, K ^{[1
]}

KRUGER, JB ^{[1
]}

HOYT, JL ^{[1
]}

KING, CA ^{[1
]}

NOBLE, DB ^{[1
]}

GRONET, CM ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD LINEAR ACCELERATOR CTR,STANFORD,CA 94305

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 11期

关键词：

D O I：

10.1109/55.43117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：503 / 505

页数：3

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