Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture

被引：9

作者：

Feng, Chengang ^{[1
]}

Yi, Mingdong

Yu, Shunyang

Ma, Dongge

Feng, Chengang ^{[1
]}

Zhang, Tong

Meruvia, Michelle S.

Huemmelgen, Ivo A.

机构：

[1] Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China

[2] Jilin Univ, Natl Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

[3] Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, Parana, Brazil

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 20期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2204653

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the production of copper phthalocyanine (CuPc) based p-type hybrid permeable-base transistors, which operate at low voltages having high common-base current gains. These transistors are prepared by evaporating a thin metal layer (Ag or Al) that acts as base on top of a Si substrate that acts as collector. In the sequence CuPc and Au are thermally sublimated to produce the emitter, constituting a quite simple device production procedure with the additional advantage of allowing higher integration due to its vertical architecture. (c) 2006 American Institute of Physics.

引用

页数：3

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