Magnetic metal-base transistor with organic emitter -: art. no. 026102

被引：18

作者：

Meruvia, MS

Munford, ML

Hümmelgen, IA

da Rocha, AS

Sartorelli, ML

Pasa, AA

Schwarzacher, W

Bonfim, M

机构：

[1] Univ Fed Parana, Grp Organ Optoelect Devices, Dept Fis, BR-81531990 Curitiba, Parana, Brazil

[2] Univ Fed Santa Catarina, BR-88040900 Florianopolis, SC, Brazil

[3] Univ Fed Parana, Lab Filmes Finos & Superficies, Dept Fis, BR-81531990 Curitiba, Parana, Brazil

[4] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[5] Univ Fed Parana, Dept Engn Eletr, BR-81531990 Curitiba, Parana, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 02期

关键词：

D O I：

10.1063/1.1836880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated a magnetic metal-base transistor using particularly simple processes. The emitter is organic, consisting of evaporated C-60 or tris(8-hydroxiquinoline) aluminum, the base is an electrochemically deposited Co/Cu/Co multilayer, and the collector is the n-Si substrate. The collector current measured in the common-base configuration increases significantly in the presence of an applied field. (C) 2005 American Institute of Physics.

引用

页数：3

共 14 条

[1]

BOZLER CO, 1980, IEEE T ELECTRON DEV, V27, P1129

[2] Room temperature spin polarized injection in organic semiconductor [J].