Models and algorithms for bounds on leakage in CMOS circuits

被引:122
作者
Johnson, MC [1 ]
Somasekhar, D
Roy, K
机构
[1] Rose Hulman Inst Technol, Dept Elect & Comp Engn, Terre Haute, IN 47803 USA
[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
algorithms; circuit analysis; circuit modeling; CMOS digital integrated circuits; integrated circuit modeling; integrated circuit testing; leakage currents; low-power integrated circuits; MOS leakage control; MOS short channel effects; very large scale integration;
D O I
10.1109/43.766723
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Subthreshold leakage current in deep submicron MOS transistors is becoming a significant contributor to power dissipation in CMOS circuits as threshold voltages and channel lengths are reduced, Consequently, estimation of leakage current and identification of minimum and maximum leakage conditions are becoming important, especially in low power applications. In this paper we outline methods for estimating leakage at the circuit level and then propose heuristic and exact algorithms to accomplish the same task for random combinational logic. In most cases the heuristic is found to obtain bounds on leakage that are close and often identical to bounds determined by a complete branch and bound search. Methods are also demonstrated to show how estimation accuracy can be traded off against execution time. The proposed algorithms have potential application in power management applications or quiescent current (I(D)DQ) testing if one wished to control leakage by application of appropriate input vectors. For a variety of benchmark circuits, leakage was found to vary by as much as a factor of six over the space of possible input vectors.
引用
收藏
页码:714 / 725
页数:12
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