SUBTHRESHOLD CURRENT REDUCTION FOR DECODED-DRIVER BY SELF-REVERSE BIASING

Analytical expressions are presented for subthreshold current reduction in a Decoded-Driver by self-reverse biasing, which is inherently required for low-voltage, low-power, high-speed DRAM's for portable equipment. The scheme involves inserting a switching MOS transistor between the driver circuits and its power supply line. The subthreshold current of the Decoded-Driver is reduced to the table iorder of 10(-3) in the practical temperature range (250-350 K) with 254 mV of self-reverse biasing voltage, while the delay time is only 3% more than in conventional schemes. The transition time of 1 ms from the operating state to the low subthreshold current state is sufficient to reduce the subthreshold current. The rapid recovery time of 1 ns from the low subthreshold current state does not interrupt the start of normal operation. The 10(-3) of subthreshold current reduction was confirmed experimentally using a test chip fabricated with 0.25-mu m technology.