A function-fit model for the soft breakdown failure mode

被引：71

作者：

Miranda, E ^{[1
]}

Suñé, J ^{[1
]}

Rodríguez, R ^{[1
]}

Nafría, M ^{[1
]}

Aymerich, X ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 06期

关键词：

charge injection; dielectric breakdown; leakage currents; MOS devices;

D O I：

10.1109/55.767093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V, In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.

引用

页码：265 / 267

页数：3

共 9 条

[1]

ARORA N, 1991, ADV MOS DEVICE PHYSI, V18, P237

[2] Soft breakdown of ultra-thin gate oxide layers [J].

Depas, M ;

Nigam, T ;

Heyns, MM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) :1499-1504

[3] Model for the current-voltage characteristics of ultrathin gate oxides after soft breakdown [J].

Houssa, M ;

Nigam, T ;

Mertens, PW ;

Heyns, MM .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (08) :4351-4355

[4]

LEE SH, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P605, DOI 10.1109/IEDM.1994.383337

[5] Soft breakdown in ultrathin SiO2 layers:: The conduction problem from a new point of view [J].

Miranda, E ;

Suñé, J ;

Rodríguez, R ;

Nafría, M ;

Martín, F ;

Aymerich, X .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (4B) :2223-2226

[6] Switching behavior of the soft breakdown conduction characteristic in ultrathin (<5 nm) oxide MOS capacitors [J].

Miranda, E ;

Sune, J ;

Rodriguez, R ;

Nafria, M ;

Aymerich, X .

1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, :42-46

[7] Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides [J].

Okada, K ;

Taniguchi, K .

APPLIED PHYSICS LETTERS, 1997, 70 (03) :351-353

[8] Point contact conduction at the oxide breakdown of MOS devices [J].

Suñé, J ;

Miranda, E ;

Nafría, M ;

Aymerich, X .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :191-194

[9]

Yoshida T., 1996, SSDM, P539

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