Point contact conduction at the oxide breakdown of MOS devices

被引：73

作者：

Suñé, J ^{[1
]}

Miranda, E ^{[1
]}

Nafría, M ^{[1
]}

Aymerich, X ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746318

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experiment and simulation are combined to demonstrate that, provided that thermal effects are limited, the dielectric breakdown of SiO2 films in MOS devices opens atomic-size conduction channels (with radius in the 1 to 18 nm range) which behave as point contacts. Depending on the size of the breakdown spot, the conduction properties are either those of a Sharvin point contact or those of a quantum point contact.

引用

页码：191 / 194

页数：4

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