Nonuniqueness of time-dependent-dielectric-breakdown distributions

被引：30

作者：

Jackson, JC ^{[1
]}

Robinson, T

Oralkan, O

Dumin, DJ

Brown, GA

机构：

[1] Clemson Univ, Dept Elect & Comp Engn, Ctr Semicond Device Reliabil Res, Clemson, SC 29634 USA

[2] Texas Instruments Inc, Dallas, TX 75265 USA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 25期

关键词：

D O I：

10.1063/1.120480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The time-dependent-dielectric-breakdown (TDDB) distributions measured on a series of identical oxides at the same voltages have been shown to depend on the resistance and capacitance of the measurement test equipment. The TDDB distributions were shifted to shorter times if the impedance of the test equipment was lowered and/or the capacitance of the test equipment was raised, The lower resistances and higher capacitances allowed the nonshorting early electric breakdowns to develop into shorting, thermal, dielectric breakdowns. (C) 1997 American Institute of Physics. [S0003-6951(97)02451-0].

引用

页码：3682 / 3684

页数：3

共 20 条

[1] ACCELERATED TESTING OF TIME-DEPENDENT BREAKDOWN OF SIO2 [J].

CHEN, IC ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) :140-142

[2]

DEGRAEVE R, 1996, P 1995 INT REL PHYS, V34, P44

[3] Soft breakdown of ultra-thin gate oxide layers [J].

Depas, M ;

Nigam, T ;

Heyns, MM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) :1499-1504

[4] A MODEL RELATING WEAROUT TO BREAKDOWN IN THIN OXIDES [J].

DUMIN, DJ ;

MADDUX, JR ;

SCOTT, RS ;

SUBRAMONIAM, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (09) :1570-1580

[5]

DUNN C, 1994, P 1995 INT REL PHYS, V33, P299

[6] CURRENT FLUCTUATIONS AND SILICON-OXIDE WEAR-OUT IN METAL-OXIDE-SEMICONDUCTOR TUNNEL-DIODES [J].

FARMER, KR ;

SALETTI, R ;

BUHRMAN, RA .

APPLIED PHYSICS LETTERS, 1988, 52 (20) :1749-1751

[7] CONDUCTION AND TRAPPING OF ELECTRONS IN HIGHLY STRESSED ULTRATHIN FILMS OF THERMAL SIO2 [J].

HARARI, E .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :601-603

[8] SWITCHING AND BREAKDOWN IN FILMS [J].

KLEIN, N .

THIN SOLID FILMS, 1971, 7 (3-4) :149-+

[9] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES [J].

KLEIN, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) :788-+

[10] LOW-FREQUENCY NOISE IN SILICON GATE METAL-OXIDE-SILICON CAPACITORS BEFORE OXIDE BREAKDOWN [J].

NERI, B ;

OLIVO, P ;

RICCO, B .

APPLIED PHYSICS LETTERS, 1987, 51 (25) :2167-2169

← 1 2 →