EXPLORATORY OBSERVATIONS OF POSTBREAKDOWN CONDUCTION IN POLYCRYSTALLINE-SILICON AND METAL-GATED THIN-OXIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS

被引:81
作者
NAFRIA, M
SUNE, J
AYMERICH, X
机构
[1] Dept. Física-Electrònica, Universitat Autònoma de Barcelona
关键词
D O I
10.1063/1.353884
中图分类号
O59 [应用物理学];
学科分类号
摘要
The post-breakdown conduction of thin-oxide metal-oxide-semiconductor structures with different gate electrodes and substrates is studied. Due to the extreme localization of the breakdown, many breakdown events can be produced in one capacitor during a constant voltage stress. In some cases, these events have been found to be reversible and this suggests that the breakdown is a reversible phenomenon (i.e., that the breakdown is a reversible switching between two conduction states of different conductivities). This reversibility is further supported by the observation of bistable conduction in the post-breakdown I-V characteristic when the breakdown current is externally limited. The experimental results are interpreted assuming that the breakdown is a three-stage process (degradation-breakdown-thermal effects), and a simple phenomenological model is presented. The role of the gate electrode (chromium, aluminum, or polycrystalline-silicon) and that of the substrate doping are analyzed within this framework. The presented results show that the analysis of the post-breakdown properties is a powerful technique to investigate the physics of the breakdown.
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页码:205 / 215
页数:11
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