OXIDE THICKNESS DETERMINATION IN CR-SIO2-SI STRUCTURES BY DC CURRENT-VOLTAGE PAIRS

被引：5

作者：

AYMERICHHUMET, X

CAMPABADAL, F

SERRAMESTRES, F

机构：

来源：

VACUUM | 1987年 / 37卷 / 5-6期

关键词：

D O I：

10.1016/0042-207X(87)90321-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：403 / 405

页数：3

共 8 条

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[7] ELECTRICAL-CONDUCTION AND DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON [J].

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