CHARACTERIZATION OF INTERFACE STATES IN THIN-FILMS OF THERMALLY GROWN SIO2

被引:3
作者
CAMPABADAL, F
AYMERICHHUMET, X
SERRAMESTRES, F
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D O I
10.1016/0042-207X(84)90187-8
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T [工业技术];
学科分类号
08 ;
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页码:1005 / 1007
页数:3
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[1]  
AYMERICHHUMET X, 1983, 9 P INT VAC C MADR, P146
[2]   TRAP-ASSISTED TUNNELING IN MIS AND SCHOTTKY STRUCTURES [J].
CAMPABADAL, F ;
MILIAN, V ;
AYMERICHHUMET, X .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 79 (01) :223-236
[3]   SI-SIO2 INTERFACE STATE SPECTROSCOPY USING MOS TUNNELING STRUCTURES [J].
CARD, HC .
SOLID-STATE ELECTRONICS, 1979, 22 (09) :809-817
[4]   MORPHOLOGY AND ELECTRONIC-STRUCTURE OF SI-SIO2 INTERFACES AND SI SURFACES [J].
HELMS, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :608-614
[5]   RESONANCE EFFECTS OBSERVED AT ONSET OF FOWLER-NORDHEIM TUNNELING IN THIN MOS STRUCTURES [J].
PETERSSON, GP ;
SVENSSON, CM ;
MASERJIAN, J .
SOLID-STATE ELECTRONICS, 1975, 18 (05) :449-451
[6]   CHEMICAL-STRUCTURE OF AL-SIO2 INTERFACE [J].
STRAUSSER, YE ;
MAJUMDER, KS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :238-239