TRAP-ASSISTED TUNNELING IN MIS AND SCHOTTKY STRUCTURES

被引：11

作者：

CAMPABADAL, F

MILIAN, V

AYMERICHHUMET, X

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 79卷 / 01期

关键词：

D O I：

10.1002/pssa.2210790125

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：223 / 236

页数：14

共 25 条

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AYMERICHHUMET, X ;

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[2] ON THE OSCILLATORY STRUCTURE IN MIM TUNNEL CONDUCTANCE [J].

AYMERICHHUMET, X ;

SERRAMESTRES, F .

SOLID STATE COMMUNICATIONS, 1980, 36 (06) :551-553

[3] ZERO BIAS ANOMALY DUE TO ELASTIC TUNNELING IN MIM STRUCTURES [J].

AYMERICHHUMET, X ;

SERRAMESTRES, F .

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[4] RESONANT TUNNELING CURRENT FOR GENERAL JUNCTION POTENTIAL BARRIER [J].

AYMERICHHUMET, X ;

SERRAMESTRES, F .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (02) :583-592

[5] RESONANT TUNNELING SPECTROSCOPY IN SCHOTTKY DIODES [J].

CALLEJA, E ;

PIQUERAS, J .

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[6]

CAMPABADAL F, 1982, 2ND C COND MATT MANC, P175

[7]

CARD HC, 1980, I PHYS C SER, V50, P140

[8]

DIMARIA DJ, 1968, PHYSICS SIO2 ITS INT, P160

[9] PHOTOEMISSION MEASUREMENTS OF INTERFACE BARRIER ENERGIES FOR TUNNEL OXIDES ON SILICON [J].

DRESSENDORFER, PV ;

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[10]

FRANZ W, 1956, HDB PHYSIK, V17, P155

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