RESONANT TUNNELING SPECTROSCOPY IN SCHOTTKY DIODES

被引：7

作者：

CALLEJA, E

PIQUERAS, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 07期

关键词：

D O I：

10.1063/1.328182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3980 / 3983

页数：4

共 9 条

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[7] EFFECT OF TRAPPING STATES ON TUNNELING IN METAL-SEMICONDUCTOR JUNCTIONS [J].

PARKER, GH ;

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[8]

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[9] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J].

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