ON THE OSCILLATORY STRUCTURE IN MIM TUNNEL CONDUCTANCE

被引：5

作者：

AYMERICHHUMET, X

SERRAMESTRES, F

机构：

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 36卷 / 06期

关键词：

D O I：

10.1016/0038-1098(80)90385-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：551 / 553

页数：3

共 7 条

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[2] ZERO BIAS ANOMALY DUE TO ELASTIC TUNNELING IN MIM STRUCTURES [J].

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[3] RESONANT TUNNELING CURRENT FOR GENERAL JUNCTION POTENTIAL BARRIER [J].

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[5] RESONANT TUNNELING VIA LOCALIZED IMPURITY STATES IN METAL-INSULATOR-METAL JUNCTIONS [J].

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CHRISTENSEN, NE .

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[6] DIRECT CALCULATION OF TUNNELING CURRENT .3. EFFECT OF LOCALIZED IMPURITY STATES IN BARRIER [J].

COMBESCOT, R .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (16) :2611-+

[7] HIGH-RESOLUTION DC-VOLTAGE-BIASED AC CONDUCTANCE BRIDGE FOR TUNNEL JUNCTION MEASUREMENTS [J].

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REVIEW OF SCIENTIFIC INSTRUMENTS, 1979, 50 (07) :903-908

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