CONDUCTION AND CHARGE STORAGE IN CR-THIN SIO2-PSI STRUCTURES

被引：9

作者：

CAPILLA, J

SARRABAYROUSE, G

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1984年 / 19卷 / 04期

关键词：

D O I：

10.1051/rphysap:01984001904034300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：343 / 347

页数：5

共 18 条

[1]

CAPILLA J, UNPUB

[2] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J].

DISTEFANO, TH ;

SHATZKES, M .

APPLIED PHYSICS LETTERS, 1974, 25 (12) :685-687

[3] THICKNESS INFLUENCE IN BREAKDOWN PHENOMENA OF THIN DIELECTRIC FILMS [J].

FORLANI, F ;

MINNAJA, N .

PHYSICA STATUS SOLIDI, 1964, 4 (02) :311-324

[4] CONDUCTION AND TRAPPING OF ELECTRONS IN HIGHLY STRESSED ULTRATHIN FILMS OF THERMAL SIO2 [J].

HARARI, E .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :601-603

[5] METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES [J].

KAR, S ;

DAHLKE, WE .

APPLIED PHYSICS LETTERS, 1971, 18 (09) :401-+

[6] DETERMINATION OF SI-METAL WORK FUNCTION DIFFERENCES BY MOS CAPACITANCE TECHNIQUE [J].

KAR, S .

SOLID-STATE ELECTRONICS, 1975, 18 (02) :169-181

[7] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+

[8]

LIANG MS, INT ELECTRON DEVICE, P50

[9] OBSERVATION OF POSITIVELY CHARGED STATE GENERATION NEAR THE SI/SIO2 INTERFACE DURING FOWLER-NORDHEIM TUNNELING [J].

MASERJIAN, J ;

ZAMANI, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :743-746

[10] ELECTRICAL-CONDUCTION AND DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON [J].

OSBURN, CM ;

WEITZMAN, EJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :603-+

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