Critical island size of the SiC formation on Si(100) and Si(111)

被引：3

作者：

Scharmann, F

Attenberger, W

Lindner, JKN

Pezoldt, J

机构：

[1] TU Ilmenau, Inst Festkorperelektron, Zentrum Mikro & Nanotechnol, D-98684 Ilmenau, Germany

[2] Univ Augsburg, Inst Phys, D-86159 Augsburg, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 89卷 / 1-3期

关键词：

nucleation; critical island size; heteroepitaxy; atomic force microscope; transmission electron microscope; silicon carbide on silicon;

D O I：

10.1016/S0921-5107(01)00852-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The nucleation of SiC during the interaction of elemental C with Si surfaces was investigated by atomic force microscopy and transmission electron microscopy. The C flux and processing temperatures were adjusted in the range of 10(13)-10(15) atoms cm(-2) s(-1) and 600-800 degreesC, respectively. The experimental results of atomic force microscopy and transmission electron microscopy investigations suggest that the SiC nucleation can be described in the framework of classical nucleation theories yielding a critical nucleus size of one atom and six atoms on Si(100) and Si(111), respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：201 / 204

页数：4

共 12 条

[1] Structural and morphological investigations of the initial stages in solid source molecular beam epitaxy of SiC on (111)Si [J].