Activation energy of nanoscale 3C-SiC island growth on Si substrate

被引：12

作者：

Sun, Y ^{[1
]}

Ayabe, T ^{[1
]}

Miyasato, T ^{[1
]}

机构：

[1] Kyushu Inst Technol, Dept Comp Sci & Elect, Fukuoka 8208502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 10B期

关键词：

activation energy; nanoscale 3C-SiC island; Si substrate; hydrogen plasma sputtering; lateral growth;

D O I：

10.1143/JJAP.38.L1166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Activation energy has been evaluated for the nanoscale island growth of 3C-SiC films deposited on (111) Si by hydrogen plasma sputtering using a SiC target. The value of 5.6 kcal/mol obtained for the island growth is lower than that reported for 3C-SiC film growth. After the completion of nucleation, the SiC islands mainly grew in the diameter direction of each island. The low activation energy is related to the formation of an amorphous SiC phase during the growth of the island films.

引用

页码：L1166 / L1168

页数：3

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