Chemical conversion of Si to SiC by solid source MBE and RTCVD

The carbonization of (111)Si surfaces exposed to a sublimed carbon molecular beam with carbon fluxes varying ca two orders of magnitude at substrate temperatures between 700 and 1050 degrees C was studied. The structural and morphological evolution was investigated in comparison to the growth under RTCVD conditions. Two different polytype structures, 3C-and 2H-SiC, were grown on 4 '' (111)Si wafers. Generally in the investigated parameter range carbonized layers formed by RTCVD have a better crystallinity and a smoother surface. (C) 1997 Elsevier Science S.A.