Free-standing diamond film preparation using copper substrate

被引：24

作者：

Fan, QH

Gracio, J

Pereira, E

机构：

[1] UNIV AVEIRO, DEPT FIS, P-3810 AVEIRO, PORTUGAL

[2] UNIV AVEIRO, DEPT ENGN MECAN, P-3810 AVEIRO, PORTUGAL

来源：

DIAMOND AND RELATED MATERIALS | 1997年 / 6卷 / 2-4期

关键词：

diamond films; free-standing; copper substrate; stress;

D O I：

10.1016/S0925-9635(96)00651-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Free-standing diamond films are prepared using copper substrates by microwave plasma chemical vapour deposition (MPCVD). A two-step growth method for stress relief is proposed to obtain relatively thin (similar to 10 mu m) films, while thicker films (>20 mu m) can be prepared by direct deposition. The film cracking mechanism is discussed. The free-standing diamond films show similar Raman spectra al surface side and back side. A carbide interface between the diamond film and the substrate is avoided as expected. (C) 1997 Elsevier Science S.A.

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收藏

页码：422 / 425

页数：4

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