DIAMOND GRAIN-GROWTH ON CU SUBSTRATE

被引：11

作者：

OJIKA, S ^{[1
]}

YAMASHITA, S ^{[1
]}

KATAOKA, K ^{[1
]}

ISHIKURA, T ^{[1
]}

机构：

[1] TOKYO GAS CO LTD, FRONTIER TECHNOL RES INST, TSURUMI KU, YOKOHAMA 230, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 11B期

关键词：

DIAMOND; COPPER; GRAIN GROWTH; CRYSTAL GROWTH; CVD; ECR PLASMA; SURFACE ENERGY;

D O I：

10.1143/JJAP.32.L1681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond growth on Cu substrates with vapor phase deposition has been studied. Diamond was deposited on Cu substrates using an electron cyclotron resonance chemical vapor deposition apparatus. Its growth process was observed through morphological variation with time in the same field of vision, which showed that diamond grains on Cu substrates grew not only through increase of the size of grains but also through their combination, and that isolated grains at an early stage of growth migrated on the substrate as if they were attracted by each other. This manner of diamond growth is specific to cases where Cu is used as the substrate.

引用

页码：L1681 / L1683

页数：3

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