LOW-TEMPERATURE SYNTHESIS OF DIAMOND FILMS USING MAGNETOMICROWAVE PLASMA CVD

被引：24

作者：

WEI, J ^{[1
]}

KAWARADA, H ^{[1
]}

SUZUKI, J ^{[1
]}

HIRAKI, A ^{[1
]}

机构：

[1] SHIMADZU CO, KYOTO 615, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 08期

关键词：

Cvd; Diamond film; Double probe; Ecr; Plasma density;

D O I：

10.1143/JJAP.29.L1483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

At a low temperature of 500°C, we have formed diamond films on Al substrates at 0.1 Torr using a magneto-microwave plasma CVD system. Since diamond can be formed at the low pressure of 0.1 Torr, the important parameters for diamond formation such as the plasma density during the diamond deposition can be measured and is found to be the highest (2.1×1011cm-3) at ECR condition. Above 1×1011cm-3, using a (CH4+CO2)/H2mixture, which is a suitable reaction gas for low-temperature diamond formation, high-quality diamond films have been obtained at temperatures as low as 500°C and at low pressure (0.1 Torr) on Al. © 1990 IOP Publishing Ltd.

引用

页码：L1483 / L1485

页数：3

共 9 条

[1] DEPOSITION OF WIDE-AREA DIAMOND FILMS IN MAGNETO-MICROWAVE PLASMA [J].