UV cleaning of contaminated 157-nm reticles

被引:9
作者
Bloomstein, TM [1 ]
Liberman, V [1 ]
Rothschild, M [1 ]
Efremow, NN [1 ]
Hardy, DE [1 ]
Palmacci, ST [1 ]
机构
[1] MIT, Lincoln Lab, Lexington, MA 02420 USA
来源
OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2 | 2001年 / 4346卷
关键词
D O I
10.1117/12.435764
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A UV-lamp-based cleaning station, serving as a load-lock to a VUV spectrometer, has been used to evaluate the cleaning of hydrocarbon residues on 157-nm reticles. UV lamp based cleaning is found to be an effective tool to remove both nanometer scale layers of physisorbed and significantly more resilient highly conjugated "graphitized" layers on the mask substrate. Slight changes in reflectance and surface roughness are observed on the chromium absorber indicating some degree of photo-oxidation is occurring during lamp cleaning.
引用
收藏
页码:669 / 675
页数:7
相关论文
共 10 条
[1]   Laser cleaning of optical elements in 157-nm lithography [J].
Bloomstein, TM ;
Rothschild, M ;
Liberman, V ;
Hardy, D ;
Efremow, NN ;
Palmacci, ST .
OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 :1537-1545
[2]   Optical materials and coatings at 157 nm [J].
Bloomstein, TM ;
Liberman, V ;
Rothschild, M ;
Hardy, DE ;
Goodman, RB .
EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2, 1999, 3676 :342-349
[3]  
FRINK ME, 1992, P SOC PHOTO-OPT INS, V1754, P286, DOI 10.1117/12.140739
[4]   Experimentation and modeling of organic photocontamination on lithographic optics [J].
Kunz, RR ;
Liberman, V ;
Downs, DK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1306-1313
[5]  
Ranby B., 1975, PHOTODEGRADATION PHO
[6]  
Silverstein R. M., 1981, SPECTROMETRIC IDENTI
[7]   UV-OZONE CLEANING OF SURFACES [J].
VIG, JR ;
LEBUS, JW .
IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1976, 12 (04) :365-370
[8]  
WARNECK P, 1988, CHEM ATMOSPHERE, P100
[9]  
WU H, 2000, P 157 NM PELL RISK A
[10]  
Zheng JF, 2000, P SOC PHOTO-OPT INS, V4186, P767