Photoluminescence excitation spectra in GaAs/AlAs trench-buried quantum wires with 20 nm wide rectangular cross-sectional shapes

被引:9
作者
Sogawa, T
Ando, S
Ando, H
Kanabe, H
机构
[1] NTT Basic Research Laboratories, Atsugi-Shi, Kanagawa 243-01
关键词
D O I
10.1063/1.116717
中图分类号
O59 [应用物理学];
学科分类号
摘要
Polarization-dependent photoluminescence excitation spectra (PLE) are measured in GaAs/AlAs rectangular trench-buried quantum wires (QWRs) with 20 nm width and various thicknesses. Experiments demonstrate that the polarization properties of the PLE spectra, which have several clear peaks corresponding to the optical transitions between quantized conduction and valence subbands, significantly depend on the cross-sectional ratios of the rectangular wires. Quantum indices of these transition levels are assigned by comparing the experiments with theory. The distinctive optical features of the QWRs with the rectangular cross sections are discussed in relation to the characteristics of one-dimensional valence subbands. (C) 1996 American Institute of Physics.
引用
收藏
页码:364 / 366
页数:3
相关论文
共 13 条
[1]   BAND-EDGE OPTICAL-ABSORPTION SPECTRA OF GAAS QUANTUM WIRES CALCULATED BY MULTIBAND EFFECTIVE-MASS THEORY [J].
ANDO, H ;
NOJIMA, S ;
KANBE, H .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (10) :6383-6390
[2]   INTERBAND ABSORPTION IN QUANTUM WIRES .1. ZERO-MAGNETIC-FIELD CASE [J].
BOCKELMANN, U ;
BASTARD, G .
PHYSICAL REVIEW B, 1992, 45 (04) :1688-1699
[3]   GAXIN1-XP MULTIPLE-QUANTUM-WIRE HETEROSTRUCTURES PREPARED BY THE STRAIN INDUCED LATERAL LAYER ORDERING PROCESS [J].
CHEN, AC ;
MOY, AM ;
PEARAH, PJ ;
HSIEH, KC ;
CHENG, KY .
APPLIED PHYSICS LETTERS, 1993, 62 (12) :1359-1361
[4]   OBSERVATION OF QUANTUM WIRE FORMATION AT INTERSECTING QUANTUM-WELLS [J].
GONI, AR ;
PFEIFFER, LN ;
WEST, KW ;
PINCZUK, A ;
BARANGER, HU ;
STORMER, HL .
APPLIED PHYSICS LETTERS, 1992, 61 (16) :1956-1958
[5]   LUMINESCENCE CHARACTERISTICS OF QUANTUM WIRES GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION ON NONPLANAR SUBSTRATES [J].
KAPON, E ;
KASH, K ;
CLAUSEN, EM ;
HWANG, DM ;
COLAS, E .
APPLIED PHYSICS LETTERS, 1992, 60 (04) :477-479
[6]   FORMATION OF GAAS RIDGE QUANTUM-WIRE STRUCTURES BY MOLECULAR-BEAM EPITAXY ON PATTERNED SUBSTRATES [J].
KOSHIBA, S ;
NOGE, H ;
AKIYAMA, H ;
INOSHITA, T ;
NAKAMURA, Y ;
SHIMIZU, A ;
NAGAMUNE, Y ;
TSUCHIYA, M ;
KANO, H ;
SAKAKI, H ;
WADA, K .
APPLIED PHYSICS LETTERS, 1994, 64 (03) :363-365
[7]   GEOMETRICAL SHAPE DEPENDENT POLARIZATION ANISOTROPY IN ELECTROLUMINESCENCE FROM INGAAS/INP QUANTUM WIRES [J].
NOTOMI, M ;
OKAMOTO, M ;
IWAMURA, H ;
TAMAMURA, T .
APPLIED PHYSICS LETTERS, 1993, 62 (10) :1094-1096
[8]   PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY ON INTERMIXED GAAS/ALGAAS QUANTUM WIRES [J].
PRINS, FE ;
LEHR, G ;
BURKARD, M ;
SCHWEIZER, H ;
PILKUHN, MH ;
SMITH, GW .
APPLIED PHYSICS LETTERS, 1993, 62 (12) :1365-1367
[9]   POLARIZATION DEPENDENCE OF OPTICAL-ABSORPTION AND EMISSION IN QUANTUM WIRES [J].
SERCEL, PC ;
VAHALA, KJ .
PHYSICAL REVIEW B, 1991, 44 (11) :5681-5691
[10]   GROWTH OF GAAS/ALAS TRENCH-BURIED MULTIPLE-QUANTUM WIRES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON V-GROOVED SUBSTRATES [J].
SOGAWA, T ;
ANDO, S ;
KANBE, H .
APPLIED PHYSICS LETTERS, 1994, 64 (24) :3299-3301