AlCaInP light-emitting diodes

被引：34

作者：

Kish, FA ^{[1
]}

Fletcher, RM ^{[1
]}

机构：

[1] Hewlett Packard Corp, Div Optoelect, San Jose, CA 95131 USA

来源：

HIGH BRIGHTNESS LIGHT EMITTING DIODES | 1997年 / 48卷

关键词：

D O I：

10.1016/S0080-8784(08)62406-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

收藏

页码：149 / +

页数：79

相关论文

共 167 条

[1] CHEMICAL ETCHING CHARACTERISTICS OF (001)GAAS
ADACHI, S
OE, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2427 - 2435
[2] REFRACTIVE-INDEX OF (ALXGA1-X)(0.5)IN0.5P QUATERNARY ALLOYS
ADACHI, S
KATO, H
MOKI, A
OHTSUKA, K
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 478 - 480
[3] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
ADACHI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
[4] ADACHI S, 1990, EMIS DATAREVIEW SER, V2, P513
[5] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P843
[6] ALFEROV ZI, 1968, SOV PHYS SEMICOND+, V1, P1313
[7] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V3, P785
[8] AlGaInP LEDs using reactive thermally evaporated transparent conducting indium tin oxide (ITO)
Aliyu, YH
Morgan, DV
Thomas, H
Bland, SW
[J]. ELECTRONICS LETTERS, 1995, 31 (25) : 2210 - 2212
[9] AMBIPOLAR TRANSPORT IN DOUBLE HETEROSTRUCTURE INJECTION-LASERS
ANTHONY, PJ
SCHUMAKER, NE
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (04): : 58 - 60
[10] GLASS-SEALED GAAS-ALGAAS TRANSMISSION PHOTOCATHODE
ANTYPAS, GA
EDGECUMBE, J
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (07) : 371 - 372

← 1 2 3 4 5 6 7 8 9 10 →