AlCaInP light-emitting diodes

[11] ANTYPAS GA, 1973, Patent No. 3769536

[12] ARCHER RJ, 1972, J ELECT MAT, V1, P1

[13] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[14] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4928 - 4931

[15] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.54-MU-UM VERTICAL-CAVITY LASERS [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) : 1225 - 1227

[16] ENERGY-BAND STRUCTURE OF ALXGA1-XAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (23): : 4709 - 4717

[17] CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 567 - 569

[18] BENGTSSON S, 1992, J ELECTRON MATER, V21, P841

[19] Born M., 1989, Principles of Optics, V6th

[20] Bour, 1993, QUANTUM WELL LASERS, P415

[11] ANTYPAS GA, 1973, Patent No. 3769536

[12] ARCHER RJ, 1972, J ELECT MAT, V1, P1

[13] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[14] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4928 - 4931

[15] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.54-MU-UM VERTICAL-CAVITY LASERS [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) : 1225 - 1227

[16] ENERGY-BAND STRUCTURE OF ALXGA1-XAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (23): : 4709 - 4717

[17] CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 567 - 569

[18] BENGTSSON S, 1992, J ELECTRON MATER, V21, P841

[19] Born M., 1989, Principles of Optics, V6th

[20] Bour, 1993, QUANTUM WELL LASERS, P415