Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

被引：664

作者：

Park, Min Hyuk ^{[1
]}

Kim, Han Joon

Kim, Yu Jin

Lee, Woongkyu

Moon, Taehwan

Hwang, Cheol Seong

机构：

[1] Seoul Natl Univ, WCU Hybrid Mat Program, Dept Mat Sci & Engn, Seoul 151744, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 24期

基金：

新加坡国家研究基金会;

关键词：

PARTIALLY-STABILIZED ZIRCONIA; ATOMIC LAYER DEPOSITION; ORTHORHOMBIC ZIRCONIA; NEUTRON-DIFFRACTION; CRYSTAL-STRUCTURE; HEAT-CAPACITY; HFO2; ZRO2;

D O I：

10.1063/1.4811483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of annealing temperature (T-anneal) and film thickness (t(f)) on the crystal structure and ferroelectric properties of Hf0.5Zr0.5O2 films were examined. The Hf0.5Zr0.5O2 films consist of tetragonal, orthorhombic, and monoclinic phases. The orthorhombic phase content, which is responsible for the ferroelectricity in this material, is almost independent of T-anneal, but decreases with increasing t(f). In contrast, increasing T-anneal and t(f) monotonically increases (decreases) the amount of monoclinic (tetragonal) phase, which coincides with the variations in the dielectric constant. The remanant polarization was determined by the content of orthorhombic phase as well as the spatial distribution of other phases. (C) 2013 AIP Publishing LLC.

引用

页数：5

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