Phase transitions in ferroelectric silicon doped hafnium oxide

被引：289

作者：

Boescke, T. S. ^{[1
]}

Teichert, St. ^{[2
]}

Braeuhaus, D. ^{[3
]}

Mueller, J. ^{[4
]}

Schroeder, U. ^{[1
]}

Boettger, U. ^{[3
]}

Mikolajick, T. ^{[1
,5
]}

机构：

[1] Namlab gGmbH, D-01187 Dresden, Germany

[2] UAS Jena, Dept SciTec, D-07745 Jena, Germany

[3] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, D-52062 Aachen, Germany

[4] Fraunhofer Ctr Nanoelect Technol CNT, D-01099 Dresden, Germany

[5] Tech Univ Dresden, Dept Nanoelect Mat, D-01062 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 11期

关键词：

NEUTRON-DIFFRACTION; TRANSFORMATION;

D O I：

10.1063/1.3636434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated phase transitions in ferroelectric silicon doped hafnium oxide (FE-Si:HfO2) by temperature dependent polarization and x-ray diffraction measurements. If heated under mechanical confinement, the orthorhombic ferroelectric phase reversibly transforms into a phase with antiferroelectric behavior. Without confinement, a transformation into a monoclinic/tetragonal phase mixture is observed during cooling. These results suggest the existence of a common higher symmetry parent phase to the orthorhombic and monoclinic phases, while transformation between these phases appears to be inhibited by an energy barrier. (C) 2011 American Institute of Physics. [doi:10.1063/1.3636434]

引用

页数：3

共 15 条

[1]

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[2] Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors [J].