AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

被引：77

作者：

Kipshidze, G ^{[1
]}

Kuryatkov, V

Borisov, B

Holtz, M

Nikishin, S

Temkin, H

机构：

[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

[2] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[3] Texas Tech Univ, Nanotech Ctr, Lubbock, TX 79409 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 20期

关键词：

D O I：

10.1063/1.1480886

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4x10(17) cm(-3), with a mobility of 8 cm(2)/Vs, is measured in Al0.4Ga0.6N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm. (C) 2002 American Institute of Physics.

引用

页码：3682 / 3684

页数：3

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