Increased electrical activity of Mg-acceptors in AlxGa1-xN/GaN superlattices

被引：65

作者：

Kumakura, K ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 9AB期

关键词：

AlGaN/GaN superlattices; Mg doping; piezoelectric effect; AlGaN alloys; MOVPE; p-type;

D O I：

10.1143/JJAP.38.L1012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We grew uniformly Mg-doped AlxGa1-xN/GaN superlattices (SLs) by low-pressure metalorganic vapor phase epitaxy and investigated the electrical properties of these SLs parallel to the SL plane. Sheer hole concentration depends strongly on the SL period thickness and Al male fraction, and the maximum sheet concentration is 8 x 10(12) cm(-2) for AlxGa1-xN/GaN (240 Angstrom/120 Angstrom) SLs in the Al mole fraction range between 0.15 and 0.3, which corresponds to the hole concentration of 3 x 10(18) cm(-3). One possible explanation for this high sheet hole concentration is that the strain-induced piezoelectric field greatly increases the electrical activity of the relatively deep Mg-acceptors in the SLs.

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收藏

页码：L1012 / L1014

页数：3

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