Microscopic and optical investigation of Ge nanoislands on silicon substrates

被引：45

作者：

Krasil'nik, ZF

Lytvyn, P

Lobanov, DN

Mestres, N

Novikov, AV

Pascual, J

Valakh, MY

Yukhymchuk, VA

机构：

[1] Russian Acad Sci, Inst Microstruct Phys, Nizhnii Novgorod 603600, Russia

[2] NASU, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[3] CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08193, Spain

[4] Univ Autonoma Barcelona, Dept Fis, Bellaterra 08193, Spain

来源：

NANOTECHNOLOGY | 2002年 / 13卷 / 01期

关键词：

D O I：

10.1088/0957-4484/13/1/318

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate self-assembled nanoislands in heteroepitaxial GeSi systems by means of atomic force microscopy and micro-Raman scattering techniques. We show that the surface diffusion of Si atoms from the substrate to the islands is strongly enhanced when the temperature increases, giving rise to a wider stability range of pyramid-shaped volumes.

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页码：81 / 85

页数：5

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