Resonant tunneling through metal (Ag-Ti)/insulator (MgO) triple barrier structures

被引:4
作者
Kado, T [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Inst Struct & Engn Mat, Chugoku Ctr, Hiroshima 7370197, Japan
关键词
D O I
10.1063/1.1476707
中图分类号
O59 [应用物理学];
学科分类号
摘要
Resonant tunneling through metal (Ag-Ti)/insulator (MgO) triple barrier structures has been demonstrated. The multilayers with the triple barrier structures were epitaxially grown on MgO (001) substrates under 473 K by the electron beam evaporation method. For the measurement of current-voltage characteristics, the mesa-isolated diodes were fabricated by photolithography. The observed current peaks in the current-voltage characteristics of the diodes could be explained as the resonant tunneling current. (C) 2002 American Institute of Physics.
引用
收藏
页码:3382 / 3384
页数:3
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