Influence of disorder on ferromagnetism in diluted magnetic semiconductors

被引:38
作者
Chudnovskiy, AL [1 ]
Pfannkuche, D [1 ]
机构
[1] Univ Hamburg, Inst Theoret Phys 1, D-20355 Hamburg, Germany
来源
PHYSICAL REVIEW B | 2002年 / 65卷 / 16期
关键词
D O I
10.1103/PhysRevB.65.165216
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Influence of disorder in the concentration of magnetic Mn2+ ions on the ferromagnetic phase transition in diluted (III,Mn)V semiconductors is investigated analytically. The regime of small disorder is addressed, and the enhancement of the critical temperature by disorder is found both in the mean-field approximation and from the analysis of the zero-temperature spin stiffness.
引用
收藏
页码:1 / 7
页数:7
相关论文
共 17 条
[1]  
ABOLFATH M, 2001, PHYSICA E, V10, P153
[2]  
Auerbach A., 1994, INTERACTING ELECT QU
[3]   Effects of disorder on ferromagnetism in diluted magnetic semiconductors [J].
Berciu, M ;
Bhatt, RN .
PHYSICAL REVIEW LETTERS, 2001, 87 (10) :1-107203
[4]   Ferromagnetism in III-V and II-VI semiconductor structures [J].
Dietl, T ;
Ohno, H .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 9 (01) :185-193
[5]   Two-component approach for thermodynamic properties in diluted magnetic semiconductors [J].
Kennett, MP ;
Berciu, M ;
Bhatt, RN .
PHYSICAL REVIEW B, 2002, 65 (11) :1-11
[6]   Theory of magnetic properties and spin-wave dispersion for ferromagnetic (Ga,Mn)As -: art. no. 184423 [J].
König, J ;
Jungwirth, T ;
MacDonald, AH .
PHYSICAL REVIEW B, 2001, 64 (18)
[7]   Theory of diluted magnetic semiconductor ferromagnetism [J].
König, J ;
Lin, HH ;
MacDonald, AH .
PHYSICAL REVIEW LETTERS, 2000, 84 (24) :5628-5631
[8]   Ferromagnetism in magnetically doped III-V semiconductors [J].
Litvinov, VI ;
Dugaev, VK .
PHYSICAL REVIEW LETTERS, 2001, 86 (24) :5593-5596
[9]   Transport properties and origin of ferromagnetism in (Ga,Mn)As [J].
Matsukura, F ;
Ohno, H ;
Shen, A ;
Sugawara, Y .
PHYSICAL REVIEW B, 1998, 57 (04) :R2037-R2040
[10]   Properties of ferromagnetic III-V semiconductors [J].
Ohno, H .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 200 (1-3) :110-129