p-type surface doping of diamond: a first-principles study

被引:28
作者
Goss, JP
Hourahine, B
Jones, R
Heggie, MI
Briddon, PR
机构
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
[2] Univ Sussex, CPES, Brighton BN1 9QJ, E Sussex, England
[3] Newcastle Univ, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
关键词
D O I
10.1088/0953-8984/13/40/313
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Surface p-type conduction in diamond has been linked to an aqueous layer on a hydrogenated surface. We have used local density function theory to examine the electronic properties of molecular adsorbates on diamond surfaces. We find that a wide range of adsorbates are able to transfer an electron from the valence band into the molecule, facilitating hole conduction.
引用
收藏
页码:8973 / 8978
页数:6
相关论文
共 15 条
[1]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[2]  
CANNAERTS M, 2001, P 6 C SURF BULK DEF
[3]   FORMATION MECHANISM OF P-TYPE SURFACE CONDUCTIVE LAYER ON DEPOSITED DIAMOND FILMS [J].
GI, RS ;
MIZUMASA, T ;
AKIBA, Y ;
HIROSE, Y ;
KUROSU, T ;
IIDA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (10) :5550-5555
[4]  
Gi RS, 1999, JPN J APPL PHYS 1, V38, P3492
[5]   Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements [J].
Hayashi, K ;
Yamanaka, S ;
Okushi, H ;
Kajimura, K .
APPLIED PHYSICS LETTERS, 1996, 68 (03) :376-378
[6]   High-performance devices from surface-conducting thin-film diamond [J].
Jackman, RB ;
Looi, HJ ;
Pang, LYS ;
Whitfield, MD ;
Foord, JS .
CARBON, 1999, 37 (05) :817-822
[7]  
Jones R, 1998, SEMICONDUCT SEMIMET, V51, P287
[8]   ELECTRICAL-PROPERTIES OF SCHOTTKY-BARRIER FORMED ON AS-GROWN AND OXIDIZED SURFACE OF HOMOEPITAXIALLY GROWN DIAMOND(001) FILM [J].
KIYOTA, H ;
MATSUSHIMA, E ;
SATO, K ;
OKUSHI, H ;
ANDO, T ;
KAMO, M ;
SATO, Y ;
LIDA, M .
APPLIED PHYSICS LETTERS, 1995, 67 (24) :3596-3598
[9]   RESISTIVITY OF CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS [J].
LANDSTRASS, MI ;
RAVI, KV .
APPLIED PHYSICS LETTERS, 1989, 55 (10) :975-977
[10]   High carrier mobility in polycrystalline thin film diamond [J].
Looi, HJ ;
Jackman, RB ;
Foord, JS .
APPLIED PHYSICS LETTERS, 1998, 72 (03) :353-355