High carrier mobility in polycrystalline thin film diamond

被引：107

作者：

Looi, HJ

Jackman, RB

Foord, JS

机构：

[1] Univ London Univ Coll, London WC1E 7JE, England

[2] Univ Oxford, Phys Chem Lab, Oxford OX1 3QZ, England

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 03期

关键词：

D O I：

10.1063/1.120734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline diamond films have been found to display p-type surface conductivity. No bulk impurity is added to the films; the p-type characteristics of the undoped diamond are thought to be due to a surface or near surface hydrogenated layer. Carrier concentrations within the range 10(17)-10(19) cm(-3) have been measured; control over the carrier concentration can be achieved by annealing the "as-grown" films in air. For a given annealing temperature a stable carrier concentration arises. The Hall carrier mobility has been explored and a value of >70 cm(2)/Vs has been measured for a film with a carrier concentration of similar to 5 x 10(17) cm(-3), the highest reported for polycrystalline thin film diamond and equivalent to boron doped single crystal diamond. (C) 1998 American Institute of Physics.

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页码：353 / 355

页数：3

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