Long-range-ordered CdTe/GaAs nanodot arrays grown as replicas of nanoporous alumina masks

被引：38

作者：

Jung, M

Mho, SI ^{[1
]}

Park, HL

机构：

[1] Ajou Univ, Dept Mol Sci & Technol, Suwon 443749, South Korea

[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2191424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Long-range-ordered CdTe nanodot arrays with controlled size and density were grown on GaAs substrates by using molecular-beam epitaxy with ultrathin nanoporous alumina masks. The CdTe/GaAs nanodot arrays were grown as replicas of the self-assembled porous alumina masks in spite of the large lattice mismatch between GaAs and CdTe. Using ultrathin alumina masks (ca. 200 nm in thickness), we fabricated CdTe nanodot arrays with uniform dot sizes in the ranges of 35 nm (with a density of similar to 2.5x10(10) cm(-2)) and 80 nm (with a density of similar to 8.1x10(9) cm(-2)). This is the report on controlling both the size and the density of II-VI/III-V heterostructure semiconductor nanodots.

引用

页数：3

共 20 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].