Formation mechanism of CdTe self-assembled quantum dots embedded into ZnTe barriers

被引：24

作者：

Jang, MS

Oh, SH

Lee, HS

Choi, JC

Park, HL

Kim, TW

Choo, DC

Lee, DU

机构：

[1] Kwangwoon Univ, Dept Phys, Seoul 139701, South Korea

[2] Yonsei Univ, Dept Phys, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 06期

关键词：

D O I：

10.1063/1.1477280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence spectra showed that the formation mechanism for CdTe layers grown on ZnTe thin films changed from a two-dimensional mode to a three-dimensional mode with increasing submonolayer CdTe layer thickness, and the temperature-dependent PL spectra indicated that the activation energy of CdTe quantum dots is larger than that of CdTe single quantum wells. The formation mechanism for the CdTe QDs is in reasonable agreement with a Stranski-Krastanov growth mode. (C) 2002 American Institute of Physics.

引用

收藏

页码：993 / 995

页数：3

相关论文

共 20 条

[1] Fine structure of the exciton in a single asymmetric CdTe quantum dot [J].

Besombes, L ;

Marsal, L ;

Kheng, K ;

Charvolin, T ;

Dang, LS ;

Wasiela, A ;

Mariette, H .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :742-746

[2] Optically pumped InAs quantum dot microdisk lasers [J].

Cao, H ;

Xu, JY ;

Xiang, WH ;

Ma, Y ;

Chang, SH ;

Ho, ST ;

Solomon, GS .

APPLIED PHYSICS LETTERS, 2000, 76 (24) :3519-3521

[3] Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots [J].

Chu, L ;

Arzberger, M ;

Zrenner, A ;

Böhm, G ;

Abstreiter, G .

APPLIED PHYSICS LETTERS, 1999, 75 (15) :2247-2249

[4] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[5] Strain in InAs islands grown on InP(001) analyzed by Raman spectroscopy [J].

Groenen, J ;

Mlayah, A ;

Carles, R ;

Ponchet, A ;

LeCorre, A ;

Salaun, S .

APPLIED PHYSICS LETTERS, 1996, 69 (07) :943-945

[6] Photoluminescence study of CdTe ZnTe self-assembled quantum dots [J].

Karczewski, G ;

Mackowski, S ;

Kutrowski, M ;

Wojtowicz, T ;

Kossut, J .

APPLIED PHYSICS LETTERS, 1999, 74 (20) :3011-3013

[7] Transmission electron microscopy investigation of structural properties of self-assembled CdSe/ZnSe quantum dots [J].

Kirmse, H ;

Schneider, R ;

Rabe, M ;

Neumann, W ;

Henneberger, F .

APPLIED PHYSICS LETTERS, 1998, 72 (11) :1329-1331

[8] Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates [J].

Konkar, A ;

Madhukar, A ;

Chen, P .

APPLIED PHYSICS LETTERS, 1998, 72 (02) :220-222

[9] Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures [J].

Lee, SW ;

Hirakawa, K ;

Shimada, Y .

APPLIED PHYSICS LETTERS, 1999, 75 (10) :1428-1430

[10] OBSERVATION OF QUANTUM EFFECTS AND COULOMB-BLOCKADE IN SILICON QUANTUM-DOT TRANSISTORS AT TEMPERATURES OVER 100 K [J].

LEOBANDUNG, E ;

GUO, LJ ;

WANG, Y ;

CHOU, SY .

APPLIED PHYSICS LETTERS, 1995, 67 (07) :938-940