Enhancement of the activation energy in coupled CdTe/ZnTe quantum dots and quantum-well structures with a ZnTe thin separation barrier

被引:37
作者
Lee, HS
Lee, KH
Choi, JC
Park, HL
Kim, TW [1 ]
Choo, DC
机构
[1] Kwangwoon Univ, Dept Phys, Seoul 139701, South Korea
[2] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
关键词
D O I
10.1063/1.1517716
中图分类号
O59 [应用物理学];
学科分类号
摘要
Temperature-dependent photoluminescence measurements showed that the activation energy of CdTe/ZnTe quantum dots (QDs) coupled with a quantum well is much larger than that of the QDs alone, This behavior is attributed to the tunneling of carriers via a thin separation layer from the quantum well to the QDs. The present observations can help improve understanding of the enhancement of the activation energy in coupled CdTe/ZnTe nanostructures. (C) 2002 American Institute of Physics.
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页码:3750 / 3752
页数:3
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