Nanotrenches induced by catalyst particles on ZnSe surfaces

被引:2
作者
Chan, S. K. [1 ]
Lok, S. K. [1 ]
Wang, G. [1 ]
Cai, Y. [1 ]
Wang, N. [1 ]
Sou, I. K. [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
关键词
nanotrenches; migration of catalyst particles; molecular beam epitaxy; ZnSe; Au;
D O I
10.1007/s11664-008-0437-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nanotrenches are induced by thermal annealing Au droplets on ZnSe surfaces. High-resolution scanning electron microscopy studies of the nanotrench structures reveal that the preferred migration directions of the catalyst droplets are along the < 110 > direction family. On a ZnSe(111) B surface, each of the trenches is along one of the six < 110 > directions while on a nonvicinal ZnSe(100) surface, the trenches are along a pair of antiparallel < 110 > directions. Based on the results obtained from atomic force microscopy surface profiling and electron energy-loss spectroscopy chemical analysis techniques, a model is proposed to describe the possible formation mechanisms of the observed nanotrenches. The highly parallel nanotrenches induced on the Au/ZnSe(100) structure as revealed in this study are potentially useful as a template for in situ fabrication of ordered one-dimensional nanostructures ( such as nanowires) of many materials.
引用
收藏
页码:1344 / 1348
页数:5
相关论文
共 16 条
[1]  
Baker H., 1992, ASM HDB, V3
[2]   Carbon nanotube guided formation of silicon oxide nanotrenches [J].
Byon, Hye Ryung ;
Choi, Hee Cheul .
NATURE NANOTECHNOLOGY, 2007, 2 (03) :162-166
[3]  
Cai Y, 2006, ADV MATER, V18, P109, DOI 10.1002/adma.200500822
[4]   Temperature-dependent growth direction of ultrathin ZnSe nanowires [J].
Cai, Yuan ;
Chan, Siu Keung ;
Sou, Iam Keong ;
Chan, Yn Tai ;
Su, Dang Sheng ;
Wang, Ning .
SMALL, 2007, 3 (01) :111-115
[5]   Control of growth orientation for epitaxially grown ZnSe nanowires [J].
Chan, SK ;
Cai, Y ;
Wang, N ;
Sou, IK .
APPLIED PHYSICS LETTERS, 2006, 88 (01)
[6]   ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy [J].
Chan, YF ;
Duan, XF ;
Chan, SK ;
Sou, IK ;
Zhang, XX ;
Wang, N .
APPLIED PHYSICS LETTERS, 2003, 83 (13) :2665-2667
[7]   Quasi-continuous growth of ultralong carbon nanotube arrays [J].
Hong, BH ;
Lee, JY ;
Beetz, T ;
Zhu, YM ;
Kim, P ;
Kim, KS .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (44) :15336-15337
[8]   Self-assembled monolayer cleaning methods: Towards fabrication of clean high-temperature superconductor nanostructures [J].
Kim, S ;
Chang, IS ;
McDevitt, JT .
APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3
[9]  
Mills K.C., 1974, THERMODYNAMIC DATA I
[10]  
MONCH W, 1993, SEMICONDUCTOR SURFAC, P84