Control of growth orientation for epitaxially grown ZnSe nanowires

被引：27

作者：

Chan, SK ^{[1
]}

Cai, Y ^{[1
]}

Wang, N ^{[1
]}

Sou, IK ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 01期

关键词：

Catalysts - Epitaxial growth - Gallium compounds - Gold - Growth (materials) - Substrates - Transmission electron microscopy;

D O I：

10.1063/1.2161397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSe nanowires (NWs) were grown on (111), (100), and (110)-oriented GaAs substrates by molecular-beam epitaxy via the vapor-liquid-solid reaction. The size dependence of NW growth orientation was studied by varying the Au catalyst size. Through detailed transmission electron microscopy studies, it was found that < 111 > orientation is the growth direction for NWs with size >= 30 nm, while NWs with size around 10 nm prefer to grow along the < 110 > direction, with a small portion along the < 112 > direction. These observations have led to the realization of vertical ZnSe NWs with size around 10 nm grown on a GaAs(110) substrate. (c) 2006 American Institute of Physics.

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