Semiconductor dynamic aperture for near-field terahertz wave imaging

被引：42

作者：

Chen, Q ^{[1
]}

Zhang, XC ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2001年 / 7卷 / 04期

基金：

美国国家科学基金会;

关键词：

electrooptic sampling; near field; terahertz imaging; terahertz technique;

D O I：

10.1109/2944.974232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe and discuss near-field terahertz wave imaging with a dynamic aperture created on a semiconductor wafer. The spatial resolution of a near-field terahertz wave imaging system with a dynamic aperture created on a GaAs wafer is determined by the diameter of the gating-beam-induced thin photocarrier layer. With a dynamic aperture created on a GaAs wafer, we have achieved a subwavelength spatial resolution of similar tolambda/10. In addition, near-field terahertz wave imaging with a dynamic aperture overcomes the limitations in the reported methods of near-field terahertz wave imaging. Particularly, it is free of the high-pass filtering effect. Various terahertz images are presented to show the possible applications.

引用

页码：608 / 614

页数：7

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