Fully ultrahigh-vacuum-compatible fabrication of submicrometer-spaced electrical contacts

被引：7

作者：

Gärtner, C ^{[1
]}

Hoffman, R

Pérez-Willard, F

Sauter, M

Sürgers, C

Von Löhneysen, H

机构：

[1] Univ Karlsruhe, Inst Phys, D-76128 Karlsruhe, Germany

[2] Univ Karlsruhe, DFG Ctr Funct Nanostruct, D-76128 Karlsruhe, Germany

[3] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany

[4] Forschungszentrum Karlsruhe, Inst Festkorperphys, D-76021 Karlsruhe, Germany

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2006年 / 77卷 / 02期

关键词：

D O I：

10.1063/1.2163973

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We present an approach by which submicrometer-spaced electrical contacts can be fabricated on virtually any surface under ultrahigh-vacuum conditions. The metallic contacts are formed by subsequent deposition through a macroscopic mask and a nanostructured stencil mask. The stencil mask with a high aspect ratio was obtained by nanopatterning of suspended low-stress Si3+xN4-x membranes with a focused ion-beam system. The fabricated contacts can be electrically connected in situ by simply exchanging the mask carrier by a second, spring-loaded, carrier. (c) 2006 American Institute of Physics.

引用

页数：3

共 13 条

[1] Metal-insulator transition in Au atomic chains on Si with two proximal bands [J].