Improved ambient operation of n-channel organic transistors of solution-sheared naphthalene diimide under bias stress

被引：40

作者：

Stolte, Matthias

Gsaenger, Marcel

Hofmockel, Robert

Suraru, Sabin-Lucian

Wuerthner, Frank ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Organ Chem, D-97074 Wurzburg, Germany

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2012年 / 14卷 / 41期

关键词：

HIGH-MOBILITY; SEMICONDUCTORS; TRANSPORT; CRYSTALS; ELECTRON; POLYMER; DEPOSITION; STABILITY;

D O I：

10.1039/c2cp41552f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Large arrays of n-channel organic thin film transistors of a core-chlorinated naphthalene diimide were processed by solution shearing on a silicon dioxide dielectric exhibiting ambient stable electron mobilities of up to 0.95 cm(2) V-1 s(-1). Under bias stress an increase in effective charge carrier mobility of up to 4.26 cm(2) V-1 s(-1) has been observed.

引用

收藏

页码：14181 / 14185

页数：5

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