Germanium-carbon multilayer films prepared by magnetron sputtering - Structure and thermally induced formation of Ge-nanocrystals

被引:7
作者
John, TM
Veit, P
Anton, R
Drusedau, TP
机构
[1] Otto-von Guericke Univ. Magdeburg, Inst. für Experimentelle Physik, 39016 Magdeburg
关键词
magnetron sputtering; germanium nanocrystals;
D O I
10.1016/S0040-6090(96)09379-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The investigated amorphous germanium-carbon multilayers are a novel system for the synthesis of germanium nanocrystals. The structure of the multilayers was studied by cross-sectional TEM and X-ray reflection. With increasing distance from the substrate, an increase of the interfaces roughness is detected. Roughening of interfaces is mainly ca;sed by germanium growth, whereas carbon smoothes the interfaces. Taking these effects into consideration, the simulated X-ray reflection spectra agree well with measured spectra. After annealing at 870 K, crystallization of the germanium sublayers is observed. The crystallite size is equal to the thickness of the Ge-layer in the range from 25 nm down to 3 nm, what is confirmed by X-ray diffraction and TEM. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:69 / 71
页数:3
相关论文
共 9 条
[1]  
COLLINS RW, 1995, MAT RES SOC S PROC, V358
[2]  
DRUSEDAU T, UNPUB PHYS STAT SOLI
[3]   VIBRATIONAL, OPTICAL AND ELECTRONIC-PROPERTIES OF THE HYDROGENATED AMORPHOUS GERMANIUM-CARBON ALLOY SYSTEM [J].
DRUSEDAU, TP ;
ANNEN, A ;
SCHRODER, B ;
FREISTEDT, H .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 69 (01) :1-20
[4]   The formation of germanium nanocrystals by thermal annealing of a-SiOx:H/a-GeOx:H multilayers [J].
Freistedt, H ;
Stolze, F ;
Zacharias, M ;
Blasing, J ;
Drusedau, TP .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 193 (02) :375-389
[5]   TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF THE CRYSTALLIZATION PROCESS IN REACTIVELY SPUTTERED A-GE-H/A-GENX MULTILAYER FILMS [J].
HONMA, I ;
KOMIYAMA, H ;
TANAKA, K .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1989, 60 (01) :3-9
[6]   GROWTH OF GERMANIUM-CARBON ALLOYS ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].
KOLODZEY, J ;
ONEIL, PA ;
ZHANG, S ;
ORNER, BA ;
ROE, K ;
UNRUH, KM ;
SWANN, CP ;
WAITE, MM ;
SHAH, SI .
APPLIED PHYSICS LETTERS, 1995, 67 (13) :1865-1867
[7]   ANNEALING AND CRYSTALLIZATION PROCESSES IN TETRAHEDRALLY BONDED BINARY AMORPHOUS-SEMICONDUCTORS [J].
MORIMOTO, A ;
KATAOKA, T ;
KUMEDA, M ;
SHIMIZU, T .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (04) :517-537
[8]   STRUCTURE AND PERFORMANCE OF SI/MO MULTILAYER MIRRORS FOR THE EXTREME-ULTRAVIOLET [J].
SLAUGHTER, JM ;
SCHULZE, DW ;
HILLS, CR ;
MIRONE, A ;
STALIO, R ;
WATTS, RN ;
TARRIO, C ;
LUCATORTO, TB ;
KRUMREY, M ;
MUELLER, P ;
FALCO, CM .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) :2144-2156
[9]   CRYSTALLIZATION AND DIFFUSION IN PROGRESSIVELY ANNEALED A-GE/SIOX SUPERLATTICES [J].
WILLIAMS, GVM ;
BITTAR, A ;
TRODAHL, HJ .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) :1874-1878