Chemical vapor deposition of (Ba,Sr)TiO3 thin films for application in gigabit scale dynamic random access memories

被引：11

作者：

Eguchi, K

Kiyotoshi, M

机构：

[1] ULSI Research Laboratories, Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210, 1, Komukai Toshiba-cho

来源：

INTEGRATED FERROELECTRICS | 1997年 / 14卷 / 1-4期

关键词：

D O I：

10.1080/10584589708019974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Our recent study respecting chemical vapor deposition of (Ba, Sr)TiO3 thin films was discussed focusing on conformal deposition technique and composition control. Perfect conformal (Ba, Sr)TiO3 films were deposited under the kinetically limited condition using Ba(THD)(2)-Sr(THD)(2)TiO(THD)(2) (THD is 2,2,6,6-tetramethyl-3,5-heptanedione) source system We successfully fabricated three-dimensional capacitors using this conformal deposition technique. Under the kinetically limited condition, the Ba/Sr composition ratio was determined by the partial pressure ratio of Ba(THD)2 and Sr(THD)(2). The self-matching of Ti/(Ba+Sr) stoichiometry occurred under a certain TiO(THD)2 supply range. It was proposed that the possible important reactant species were (THD)(2)Ba-O-Ti(THD)(2) and (THD)(2)Sr-O-Ti(THD)(2) dimers.

引用

页码：33 / 42

页数：10

共 8 条

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