Aluminum oxide doped with erbium, titanium and chromium for active integrated optical applications

被引：27

作者：

Mahnke, M

Wiechmann, S

Heider, HJ

Blume, O

Müller, J

机构：

[1] Tech Univ Hamburg, Abt Mikrosystemtech, D-21073 Hamburg, Germany

[2] Alcatel Stuttgart, Stuttgart, Germany

来源：

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 2001年 / 55卷 / 05期

关键词：

MO-PECVD; aluminum oxide; integrated optics; doping; erbium; titanium; chromium;

D O I：

10.1078/1434-8411-00051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphous thin films with very low attenuation are grown by MO-PECVD. The modifications due to the annealing condition are subject of investigations. Aluminum oxide waveguides are doped with erbium for applications in telecommunication to develop an integrated optical amplifier. Also Al2O3 doped with transition elements to develop tunable solid state lasers for spectroscopic measurements is of interest. Lasers with broadest fluorescence bands are Ti:Sapphire lasers or chromium doped specific crystals or glasses. In this paper the suitability of titanium and chromium doped aluminum oxide material as laser material is examined. Titanium and chromium doped waveguides have been annealed. Their fluorescence and lifetime measurements are presented.

引用

页码：342 / 348

页数：7

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