Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires

被引：83

作者：

Heigoldt, Matthias ^{[2
]}

Arbiol, Jordi ^{[1
]}

Spirkoska, Dance ^{[2
]}

Rebled, Josep M. ^{[3
]}

Conesa-Boj, Sonia ^{[3
]}

Abstreiter, Gerhard ^{[2
]}

Peiro, Francesca ^{[3
]}

Morante, Joan R. ^{[3
,5
]}

Morral, Anna Fontcuberta i ^{[2
,4
]}

机构：

[1] Univ Barcelona, Serv Cient Tecn, TEM MAT, E-08028 Barcelona, Cat, Spain

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[3] Univ Barcelona, Dept Elect, EME XaRM AE IN2UB, E-08028 Barcelona, Cat, Spain

[4] Ecole Polytech Fed Lausanne, Inst Mat, Lab Mat Semicond, CH-1015 Lausanne, Switzerland

[5] Catalonia Inst Energy Res, IREC, Barcelona 08019, Cat, Spain

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2009年 / 19卷 / 07期

关键词：

D O I：

10.1039/b816585h

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Molecular beam epitaxy is used for the synthesis of catalyst-free GaAs nanowires and related quantum heterostructures. After growth of the nanowire GaAs core, the conditions are changed in situ towards standard MBE planar growth in order to obtain quantum heterostructures on the facets of the nanowires. Depending on the nanowire orientation, different geometries of the quantum heterostructures are obtained. This growth method is fully characterized by high resolution and scanning transmission electron microscopy and Z-contrast electron tomography. The growth conditions are also tuned for the optimization and homogeneity of the optical properties. The feedback of these analyses allows the tuning of the growth conditions according to the required optical properties. This work is the basis for obtaining a new generation of devices based on the heterostructures existing on the nanowire facets.

引用

页码：840 / 848

页数：9

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