Imprint induced failure modes in ferroelectric non-volatile memories

被引：6

作者：

Benedetto, JM

机构：

[1] Army Research Laboratory, Adelphi

来源：

INTEGRATED FERROELECTRICS | 1997年 / 15卷 / 1-4期

关键词：

D O I：

10.1080/10584589708015694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of a preferential state in FE capacitors due to prolonged storage in a particular memory state, i.e. ''preferential aging induced imprint,'' causes a significant vulnerability in FE non-volatile memories. Imprint due to repeated rewriting of the capacitor or by the application of a DC bias, i.e. ''external bias induced imprint,'' appears to be much more common in FE capacitors than preferential aging induced imprint, but may not pose as serious a problem from a reliability standpoint.

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页码：29 / 38

页数：10

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