Biaxial moduli of coherent Si1-xGex films on Si (001)

被引：13

作者：

Floro, JA

Chason, E

Lee, SR

Petersen, GA

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 12期

关键词：

D O I：

10.1063/1.120006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The biaxial moduli of coherently strained Si1-xGex thin films have been determined over the composition range x=0.15-0.6 from independent measurements of film stress and strain. Our results indicate that use of the rule of mixtures to determine the strained-alloy elastic constants from the bulk values for pure Si and Ge is valid, and that higher-order elastic effects are relatively unimportant over this composition range. (C) 1997 American Institute of Physics.

引用

页码：1694 / 1696

页数：3

共 18 条

[1]

[Anonymous], ADV XRAY ANAL

[2]

BAKER SP, 1995, PROPERTIES STRAINED, P67

[3]

CHASON E, 1992, APPL PHYS LETT, V66, P2353

[4] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J].